Drain Induced Barrier Lowering

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• Drain Induced Barrier Lowering — As channel length decreases, the barrier φB to be surmounted by an electron from the source on its way to the drain reduces Drain induced barrier lowering or DIBL is a secondary effect in MOSFETs referring originally to a reduction of threshold… …   Wikipedia

• MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

• Channel length modulation — Cross section of a MOSFET operating in the saturation region One of several short channel effects in MOSFET scaling, channel length modulation (CLM) is a shortening of the length of the inverted channel region with increase in drain bias for… …   Wikipedia

• Threshold voltage — The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The creation of this layer is described next …   Wikipedia

• Reverse Short Channel Effect — The reverse short channel effect is a secondary effect describing the reduction in threshold voltage Vth in MOSFETs with non uniformly doped channel regions as the gate length increases. Since drive current is primarily determined by Vth, longer… …   Wikipedia

• DIBL — abbr. Drain Induced Barrier Lowering (IC, MOSFET) …   United dictionary of abbreviations and acronyms

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